International Research Journal of Innovations in Engineering and Technology - IRJIET International Open Access, Monthly, Peer Reviewed, Reputed Journal ISSN (online): 2581-3048

Impact Factor (2025): 6.9

DOI Prefix: 10.47001/IRJIET

Design of Low Noise Amplifier using MOSFET Transistor for Xband Application

Abstract

Maximum power gain and minimum noise figure of are equally important in communication receivers. However both cannot be achieved simultaneously also trade-off between these two gives a complex design. In this project a single stage Low Noise Amplifier (LNA) design using Nonlinear MOSFET model have been proposed for X-band applications like radar, satellite ground station services and Direct Broadcast Satellite (DBS) service. Advanced Designed System (ADS) tool has been used to construct and simulate the circuit. The performance parameters of the amplifier such as Noise Figure, Gain, VSWR, 1 dB compression point, Third Order Intercept point (TOI), Harmonic power levels, Dynamic Range are analyzed by considering all device parasitic elements including package parasitic. A hybrid Microwave Integrated Circuit (MIC) which uses minimal microwave discrete components and micro strip transmission lines for biasing and matching networks have been adopted here. Compared to the High Electron Mobility Transistor (HEMT) with three stages, This LNA based MOSFET design provides 11 dB better gain with single stage. The IIP3 is also well improved to 15 dBm rather than −1 dBm reported. The 1 dB compression range is also quite better as 7 dBm.

Country : India

1 Mr.C.Surya prasath2 Mrs.Dr.T.Aruna

  1. M.E, Dept. of Communication Systems, Paavai Engineering College, Paavai Nagar, NH-7, Namakkal, Tamilnadu-637018, India
  2. Associate Professor, Dept of ECE, Paavai Engineering College, Paavai Nagar, NH-7, Namakkal, Tamilnadu-637018, India

IRJIET, Volume 4, Issue 2, February 2020 pp. 76-80

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