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DOI Prefix: 10.47001/IRJIET
Vol 8 No 10 (2024): Volume 8, Issue 10, October 2024 | Pages: 168-177
International Research Journal of Innovations in Engineering and Technology
OPEN ACCESS | Research Article | Published Date: 22-10-2024
Three-dimensional integrated systems employing vertical stacking technology and through-silicon via (TSV) interconnects offer enhanced performance and reduced power consumption. However, TSV technology introduces elector-thermal coupling phenomena, compromising the reliability and efficiency of these systems. This study provides a comprehensive review of simulation design advancements for elector-thermal coupling in TSV-based three-dimensional integrated circuits. Electrical and thermal simulation methodologies are elucidated and potential impacts and mitigation strategies are thoroughly explored. A systematic analysis is presented to elucidate the challenges and optimization opportunities in elector-thermal coupling, informing future research directions.
Three dimensional integrated circuits, (3D-ics); through silicon via tsv technology; Electro thermal coupling; simulation design; thermal electric modeling
Kifayat Ullah, Atif Rauf Khan, & Nigar Hussain. (2024). Investigating Electro-Thermal Coupling in Three-Dimensional Integrated Systems: Simulation Design Advances and Mitigation Strategies. International Research Journal of Innovations in Engineering and Technology - IRJIET, 8(10), 168-177. Article DOI https://doi.org/10.47001/IRJIET/2024.810023
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